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| Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A 4.00.2 Unit: mm s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1030 2SB1030A 2SB1030 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol (Ta=25C) Ratings -30 -60 -25 -50 -7 -1 - 0.5 300 150 -55 ~ +150 Unit marking +0.2 0.45-0.1 15.60.5 0.70.1 Optimum for high-density mounting. Allowing supply with the radial taping. 3.00.2 V 1 2 3 emitter voltage 2SB1030A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V 1.27 1.27 V A A mW C C 1:Emitter 2:Collector 3:Base 2.540.15 EIAJ:SC-72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SB1030 2SB1030A 2SB1030 2SB1030A (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) fT Cob Conditions VCB = -20V, IE = 0 VCE = -20V, IB = 0 IC = -10A, IE = 0 IC = -2mA, IB = 0 IE = -10A, IC = 0 VCE = -10V, IC = -150mA*2 VCE = -10V, IC = -500mA*2 IC = -300mA, IB = -30mA*2 VCB = -10V, IE = 50mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz -30 -60 -25 -50 -7 85 40 - 0.35 200 6 *2 min typ max - 0.1 -1 2.00.2 Unit A A V V V 340 Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance - 0.6 V MHz 15 pF Pulse measurement *1h FE1 Rank classification Q 85 ~ 170 R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC -- Ta 500 -1200 Ta=25C 450 -1000 2SB1030, 2SB1030A IC -- VCE -100 VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 Collector power dissipation PC (mW) -30 -10 -3 -1 Ta=-25C 25C 75C 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Collector current IC (mA) 400 -800 IB=-10mA -9mA -8mA -7mA -6mA -5mA -4mA -3mA -2mA -1mA -600 -400 - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -200 0 0 -2 -4 -6 -8 -10 -12 -1 -3 -10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 Ta=75C 25C -25C IC/IB=10 600 hFE -- IC 160 VCE=-10V fT -- I E VCB=-10V Ta=25C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) -1 -3 -10 140 120 100 80 60 40 20 400 300 Ta=75C 200 25C -25C 100 - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 0 - 0.01 - 0.03 - 0.1 - 0.3 0 0.1 0.3 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob -- VCB 20 240 IE=0 f=1MHz Ta=25C NV -- IC VCE=-10V Ta=25C Function=FLAT Collector output capacitance Cob (pF) 18 16 14 12 10 8 6 4 2 0 -1 200 Noise voltage NV (mV) 160 120 80 Rg=100k 22k 40 4.7k 0 -10 -3 -10 -30 -100 -30 -100 -300 -1000 Collector to base voltage VCB (V) Collector current IC (A) 2 |
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